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| BRT11/ 12/ 13 Vishay Semiconductors Optocoupler, Phototriac Output Features * ITRMS = 300 mA * High Static dVcrq/dt < 10,000 V/s * Electrically Insulated between Input e3 and output circuit * Microcomputer compatible - Very Low Trigger Current * Non-zero voltage detectors High input Sensitivity * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A1 C2 NC 3 6 MT2 5 NC 4 MT1 i179041 Agency Approvals * UL1577, File No. E52744 System Code J * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Order Information Part BRT12-F BRT11-H BRT12-H BRT13-H BRT11-M BRT12-M BRT13-M BRT12-F-X006 Remarks 600 V VDRM, 1.2 mA IFT, DIP-6 400 V VDRM, 2 mA IFT, DIP-6 600 V VDRM, 2 mA IFT, DIP-6 800 V VDRM, 2 mA IFT, DIP-6 400 V VDRM, 3 mA IFT, DIP-6 600 V VDRM, 3 mA IFT, DIP-6 800 V VDRM, 3 mA IFT, DIP-6 600 V VDRM, 1.2 mA IFT, DIP-6 400 mil (option 6) 600 V VDRM, 1.2 mA IFT, DIP-6 400 mil (option 7) 600 V VDRM, 2 mA IFT, DIP-6 400 mil (option 6) 600 V VDRM, 2 mA IFT, SMD-6 (option 7) 600 V VDRM, 2 mA IFT, SMD-6 (option 9) 800 V VDRM, 2 mA IFT, DIP-6 400 mil (option 6) 800 V VDRM, 2 mA IFT, SMD-6 (option 7) 800 V VDRM, 2 mA IFT, SMD-6 (option 9) 600 V VDRM, 3 mA IFT, DIP-6 400 mil (option 6) Applications Industrial controls Office equipment Consumer appliances Description The BRT11/12/13 are AC optocouplers non-zero voltage detectors consisting of two electrically insulated lateral power ICs which integrate a thyristor system, a photo detector and noise suppression at the output and an IR GaAs diode input. BRT12-F-X007 BRT12-H-X006 BRT12-H-X007 BRT12-H-X009 BRT13-H-X006 BRT13-H-X007 BRT13-H-X009 BRT12-M-X006 For additional information on the available options refer to Option Information. Document Number 83689 Rev. 1.4, 11-Apr-05 www.vishay.com 1 BRT11/ 12/ 13 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward continuous current Surge forward current Power dissipation t 10 s Test condition Symbol VR IF IFSM Pdiss Value 6 20 1.5 30 Unit V mA A mW Output Parameter Repetitive peak off-state voltage Test condition Part BRT11 BRT12 BRT13 RMS on-state current Single cycle surge current Power dissipation 50 Hz Symbol VDRM VDRM VDRM ITRMS ITSM Pdiss Value 400 600 800 300 3 600 Unit V V V mA A mW Coupler Parameter Max. power dissipation Ambient temperature Storage temperature Insulation test voltage between input/output circuit (climate in acc. with DIN 40046, part 2, Nov. 74) Reference voltage in acc. with VDE 0110 b Reference voltage in acc. with VDE 0110 b (insulation group C) Creepage resistance (in acc. with DIN IEC 112/VDE 0303, part 1) Insulation resistance (group IIIa acc. to DIN VDE 0109) VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C DIN humidity category, DIN 40 040 Creepage distance (input/output circuit) Clearance (input/output circuit) 1) 1) Test condition Symbol Ptot Tamb Tstg VISO Value 630 - 40 to + 100 - 40 to + 150 5300 Unit mW C C VRMS Vref Vref CTI 500 600 175 VRMS VDC RIO RIO 1012 1011 F 7.2 7.2 mm mm Test AC voltage in acc. with DIN 57883, June 1980 www.vishay.com 2 Document Number 83689 Rev. 1.4, 11-Apr-05 BRT11/ 12/ 13 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Thermal resistance 2) junction - ambient 2) Test condition IF = 10 mA VR = 6 V Symbol VF IR Rthja Min Typ. 1.1 Max 1.35 10 750 Unit V A C/W Static air, SITAC soldered in pcb or base plate. Output Parameter Critical rate of rise of off-state voltage Critical rate of rise of voltage at current commutation Test condition VD = 0.67 VDRM, TJ = 25 C VD = 0.67 VDRM, TJ = 80 C VD = 0.67 VDRM, TJ = 25 C, dI/dtcrq 15 A/ms VD = 0.67 VDRM, TJ = 80 C, dI/dtcrq 15 A/ms Critical rate of rise of on-state current Pulse current On-state voltage Off-state current Holding current Thermal resistance ambient 2) 2) Symbol dV/dtcr dV/dtcr dV/dtcrq dV/dtcrq dI/dtcr Min 10 5 10 5 8 Typ. Max Unit kV/s kV/s kV/s kV/s A/s tp 5 s, f 0 100 Hz, dItp/dt 8 A/s IT = 300 mA TC = 80 C, VDRM VD = 10 V junction RthJA Itp VT ID IH Rthja 0.5 80 2 2.3 100 500 125 A V A A C/W Static air, SITAC soldered in pcb or base plate. Coupler Parameter Trigger current Test condition VD = 10 V, F - Versions VD = 10 V, H - Versions VD = 10 V, M - Versions Trigger current temperature gradient Capacitance (input-output) VR = 0 V, f = 1 kHz Symbol IFT IFT IFT IFT/Tj CIO 0.4 0.8 7 Min Typ. Max 1.2 2 3 14 2 Unit mA mA mA A/C pF Document Number 83689 Rev. 1.4, 11-Apr-05 www.vishay.com 3 BRT11/ 12/ 13 Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) tgd=f(IF/IFT25C) VD=200V IFTN=f(tpIF) IFTN normalized to IFT refering to tpIF 1 m Vop=220V,f= 4 0 ...60Hz typ. 17239 17242 Figure 1. Typical Trigger Delay Time Figure 4. Pulse Trigger Current Ptot= (ITRMS) IF = (VF) 17240 17243 Figure 2. Power Dissipation 40 to 60 Hz Line Operation Figure 5. Typical Input Characteristics ID=f(Tj) VD=800V IT = (VT) 17241 17244 Figure 3. Typical Off-State Current Figure 6. Typical Output Characteristics www.vishay.com 4 Document Number 83689 Rev. 1.4, 11-Apr-05 BRT11/ 12/ 13 Vishay Semiconductors ITRMS = (TA) RthJA = 125 K/W 3) ITRMS = (TPIN5) RthJ-PIN5 = 16,5 K/W 4) 17245 17246 Figure 7. Current Reduction Figure 8. Current Reduction Package Dimensions in Inches (mm) 3 .248 (6.30) .256 (6.50) 2 1 pin one ID ISO Method A 4 5 6 .335 (8.50) .343 (8.70) .039 (1.00) Min. .048 (1.22) .052 (1.32) .130 (3.30) .150 (3.81) 18 .033 (0.84) typ. .033 (0.84) typ. .100 (2.54) typ 3-9 .008 (.20) .012 (.30) .300-.347 (7.62-8.81) .130 (3.30) .150 (3.81) .300 (7.62) typ. 4 typ . .018 (0.46) .020 (0.51) i178014 Document Number 83689 Rev. 1.4, 11-Apr-05 www.vishay.com 5 BRT11/ 12/ 13 Vishay Semiconductors Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18450 www.vishay.com 6 Document Number 83689 Rev. 1.4, 11-Apr-05 BRT11/ 12/ 13 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 83689 Rev. 1.4, 11-Apr-05 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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